| PART |
Description |
Maker |
| B592-2T B593-2T B534E2T B634E2T B543E2T B512E2T B5 |
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|240V V(RRM)|27A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|280V V(RRM)|27A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|440V V(RRM)|27A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|440V V(RRM)|46A I(T)
THYRISTOR MODULE|BRIDGE|FULLY-CNTLD|280V V(RRM)|27A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|240V V(RRM)|27A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|240V V(RRM)|27A I(T)
THYRISTOR MODULE|BRIDGE|FULLY-CNTLD|240V V(RRM)|27A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|240V V(RRM)|46A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|240V V(RRM)|46A I(T)
THYRISTOR MODULE|AC SWITCH|46A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|240V V(RRM)|46A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|240V V(RRM)|27A I(T)
THYRISTOR MODULE|AC SWITCH|27A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|120V V(RRM)|27A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|440V V(RRM)|27A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|440V V(RRM)|27A I(T) 晶闸管模块|桥|半CNTLD |加利福尼亚州| 440V五（无线资源管理）| 27A条疙（T
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|120V V(RRM)|27A I(T) 晶闸管模块|桥|半CNTLD |消委会| 120伏特五（无线资源管理）| 27A条疙（T
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|280V V(RRM)|27A I(T) 晶闸管模块|桥|半CNTLD | 280伏特五（无线资源管理）| 27A条疙（T
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|440V V(RRM)|46A I(T) 晶闸管模块|桥|半CNTLD |消委会| 440V五（无线资源管理）| 46A条疙（T
|
ITT, Corp.
Crydom, Inc.
Astrodyne, Inc.
California Eastern Laboratories, Inc.
|
| IRFP27N60K |
Power MOSFET(Vdss=600V, Rds(on)typ.=180mohm, Id=27A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rdson）典\u003d 180mohm，身份证\u003d 27A条）
Power MOSFET(Vdss=600V / Rds(on)typ.=180mohm / Id=27A)
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| AOK27S60 |
600V 27A a MOS Power Transistor
|
Alpha & Omega Semiconductors
|
| FDB390N15A |
N-Channel PowerTrench? MOSFET 150V, 27A, 39m
|
Fairchild Semiconductor
|
| HUF76419P3 HUF76419S3S HUF76419S3ST HUF76419S3STNL |
60V N-Channel Logic Level UltraFET MOSFET
27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFETPower MOSFET
27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
Fairchild Semiconductor
|
| RJL6018DPK RJL6018DPK-15 RJL6018DPK-00T0 RJL6018DP |
600V - 27A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| IRG4PC50W IRG4PC50WPBF |
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.30V, @Vge=15V, Ic=27A)
|
IRF[International Rectifier]
|
| APT8030B2VR |
POWER MOS V 800V 27A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| HUF76419S3S HUF76419P3 FN4669 |
27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 29 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
From old datasheet system
|
Intersil, Corp.
Intersil Corporation
|
| HD74HC123 HD74HC123A HC123 |
Bridge Rectifier; Repetitive Reverse Voltage Max, Vrrm:1000V; Package/Case:DO-27A; Current Rating:3A; Forward Current:3A; Forward Voltage:1.2V; Mounting Type:Through Hole; Terminal Type:Axial Leaded
Dual Retriggerable Monostable Multivibrators (with Clear)
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| IRG4BC40F |
600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A) 绝缘栅双TRANSISOR（VCES和\u003d 600V电压的Vce（on）典\u003d 1.50V，@和VGE \u003d 15V的，集成电路\u003d 27A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRG4PC50U IRG4PC50U-E |
55 A, 600 V, N-CHANNEL IGBT, TO-247AD
55 A, 600 V, N-CHANNEL IGBT, TO-247AC
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A) 绝缘栅双极晶体管（VCES和\u003d 600V电压的Vce（on）典\u003d 1.65V的，@和VGE \u003d 15V的，集成电路\u003d 27A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
